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SSF3944J7-HF Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSF3944J7-HF Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
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2 / 7 page  SSF3944J7-HF ©Silikron Semiconductor CO., LTD. 2014.10.13 Version: 1.0 page 2 of 7 www.silikron.com Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 2 ℃ /W RθJA Junction-to-ambient (t ≤ 10s)④ — 50 ℃ /W Electrical Characterizes@TA=25℃unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 30 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 1.6 2.4 mΩ VGS=10V,ID = 30A — 2.1 3.2 VGS=4.5V,ID = 25A RDS(on) Static Drain-to-Source on-resistance — 4 5 mΩ VGS=4.5V,ID = 16A — 5 — TJ = 125℃ VGS(th) Gate threshold voltage 1 1.7 3 V VDS = VGS, ID = 250μA — 1.17 — TJ = 125℃ IDSS Drain-to-Source leakage current — — 1 μA VDS = 24V,VGS = 0V — — 50 TJ = 125°C IGSS Gate-to-Source forward leakage — — 100 nA VGS =20V — — -100 VGS = -20V Qg Total gate charge — 80 — nC VDS=15V, ID=30A, VGS=10V Qgs Gate-to-Source charge — 19 — Qgd Gate-to-Drain("Miller") charge — 38 — td(on) Turn-on delay time — 20 — ns VGS=10V, VDS=15V, RGEN=1Ω, ID=1A tr Rise time — 36 — td(off) Turn-Off delay time — 80 — tf Fall time — 33 — Ciss Input capacitance — 7032 — pF VGS = 0V VDS = 15V ƒ = 1MHz Coss Output capacitance — 898 — Crss Reverse transfer capacitance — 743 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 150 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 340 A V SD Diode Forward Voltage — 0.85 1.3 V IS=50A, VGS=0V trr Reverse Recovery Time — 35 — ns TJ = 25°C, IF =1A, di/dt = 100A/μs Qrr Reverse Recovery Charge — 15 — nC |
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