SW7N60D datasheet(2/5 Pages) SEMIPOWER

Part #	SW7N60D

Description	N-channel TO-220F MOSFET

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Manufacturer	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Direct Link	http://www.samwinsemi.com

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2 / 5 page

June. 2014. Rev.1.0

Electrical characteristic ( T

C = 25

oC unless otherwise specified )

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Off characteristics

BV

DSS

Drain to source breakdown voltage

V

GS=0V, ID=250uA

600

V

ΔBV

DSS

/ ΔT

J

Breakdown voltage temperature

coefficient

I

D=250uA, referenced to 25

oC

0.47

V/oC

I

DSS

Drain to source leakage current

V

DS=600V, VGS=0V

1

uA

V

DS=480V, TC=125

oC

50

uA

I

GSS

Gate to source leakage current, forward

V

GS=30V, VDS=0V

100

nA

V

GS=-30V, VDS=0V

-100

nA

Gate to source leakage current, reverse

On characteristics

V

GS(TH)

Gate threshold voltage

V

DS=VGS, ID=250uA

2.5

4.5

V

R

DS(ON)

Drain to source on state resistance

V

GS=10V, ID = 3.5A

1.1

1.2

Ω

Gfs

Forward Transconductance

VDS = 30 V, ID = 3.5 A

6

S

Dynamic characteristics

C

iss

Input capacitance

V

GS=0V, VDS=25V, f=1MHz

1000

pF

C

oss

Output capacitance

115

C

rss

Reverse transfer capacitance

25

t

d(on)

Turn on delay time

V

DS=300V, ID=7A, RG=25Ω

(note 4，5)

14

ns

tr

Rising time

32

t

d(off)

Turn off delay time

67

t

f

Fall time

35

Q

g

Total gate charge

V

DS=480V, VGS=10V, ID=7A

(note 4，5)

30

nC

Q

gs

Gate-source charge

5

Q

gd

Gate-drain charge

15

Source to drain diode ratings characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

S

Continuous source current

Integral reverse p-n Junction

diode in the MOSFET

7

A

I

SM

Pulsed source current

28

A

V

SD

Diode forward voltage drop.

I

S=7A, VGS=0V

1.5

V

T

rr

Reverse recovery time

I

S=7A, VGS=0V,

dI

F/dt=100A/us

315

ns

Q

rr

Breakdown voltage charge

3.1

uC

※. Notes

1.

Repeatitive rating : pulse width limited by junction temperature.

2.

L = 17.7mH, I

AS = 7A, VDD = 50V, RG=25Ω, Starting TJ = 25

oC

3.

I

SD ≤ 10A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25

oC

4.

Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%

5.

Essentially independent of operating temperature.

2/5

SAMWIN

SW7N60D

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SW7N60D Datasheet(PDF) 2 Page - Xian Semipower Electronic Technology Co., Ltd.

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