SW20N50U datasheet(2/5 Pages) SEMIPOWER

Part #	SW20N50U

Description	N-channel TO-3P MOSFET

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Manufacturer	SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]

Direct Link	http://www.samwinsemi.com

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2 / 5 page

Feb. 2014. Rev. 1.0

Electrical characteristic ( T

C = 25

oC unless otherwise specified )

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Off characteristics

BV

DSS

Drain to source breakdown voltage

V

GS=0V, ID=250uA

500

V

ΔBV

DSS

/ ΔT

J

Breakdown voltage temperature

coefficient

I

D=250uA, referenced to 25

oC

0.54

V/oC

I

DSS

Drain to source leakage current

V

DS=500V, VGS=0V

1

uA

V

DS=400V, TC=125

oC

50

uA

I

GSS

Gate to source leakage current, forward

V

GS=30V, VDS=0V

100

nA

V

GS=-30V, VDS=0V

-100

nA

Gate to source leakage current, reverse

On characteristics

V

GS(TH)

Gate threshold voltage

V

DS=VGS, ID=250uA

2

4

V

R

DS(ON)

Drain to source on state resistance

V

GS=10V, ID =10A

0.19

0.27

Ω

Gfs

Forward Transconductance

V

DS = 30 V, ID =10A

19

S

Dynamic characteristics

C

iss

Input capacitance

V

GS=0V, VDS=25V, f=1MHz

4157

pF

C

oss

Output capacitance

374

C

rss

Reverse transfer capacitance

36

t

d(on)

Turn on delay time

V

DS=250V, ID=20A, RG=25Ω

(note 4,5)

53

75

ns

tr

Rising time

74

95

t

d(off)

Turn off delay time

272

320

t

f

Fall time

77

100

Q

g

Total gate charge

V

DS=400V, VGS=10V, ID=20A

(note 4,5)

103

150

nC

Q

gs

Gate-source charge

23

Q

gd

Gate-drain charge

41

Source to drain diode ratings characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

S

Continuous source current

Integral reverse p-n Junction

diode in the MOSFET

20

A

I

SM

Pulsed source current

80

A

V

SD

Diode forward voltage drop.

I

S=20A, VGS=0V

1.5

V

T

rr

Reverse recovery time

I

S=20A, VGS=0V,

dI

F/dt=100A/us

436

ns

Q

rr

Reverse recovery Charge

6.9

uC

※. Notes

1.

Repeatitive rating : pulse width limited by junction temperature.

2.

L = 11.2 mH, I

AS = 20A, VDD = 50V, RG=25Ω, Starting TJ = 25

oC

3.

I

SD ≤ 20A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25

oC

4.

Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%

5.

Essentially independent of operating temperature.

2/5

SW20N50U

SAMWIN

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