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SSFN2316E Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSFN2316E Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
2 / 5 page SSFN2316E Zero Gate Voltage Drain Current I V =20V,V =0V 1 μA DSS DS GS Gate-Body Leakage Current I V =±8V,V =0V ±10 μA GSS GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V =V GS(th) DS GS,ID=250μA 0.5 1.3 V V =4.5V, I GS D=4A 17 23 mΩ V =4V, I GS D=4A 18 24 mΩ VGS=3.1V, ID=4A 20 30 mΩ Drain-Source On-State Resistance RDS(ON) V =2.5V, I GS D=2A 24 35 mΩ Forward Transconductance g V =10V,I FS DS D=3.5A 11 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C 900 PF lss Output Capacitance Coss 350 PF V =8V,V DS GS=0V, F=1.0MHz Reverse Transfer Capacitance C 150 PF rss SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t 15 nS d(on) Turn-on Rise Time t 100 nS r Turn-Off Delay Time td(off) 60 nS V =10V,I DD D=1A V =4.5V,R Turn-Off Fall Time tf GS GEN=6Ω 90 nS Total Gate Charge Q 20 nC g Gate-Source Charge Qgs 2.5 nC V =10V,I Gate-Drain Charge Qgd DS D=7A, =4.5V VGS 3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V V =0V,I =7A 0.83 1.2 V SD GS S NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. ©Silikron Semiconductor CO.,LTD. 2 http://www.silikron.com v1.0 |
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