SSFN2316E

Zero Gate Voltage Drain Current

I

V =20V,V =0V

1

μA

DSS

DS

GS

Gate-Body Leakage Current

I

V =±8V,V =0V

±10

μA

GSS

GS

DS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

0.5

1.3

V

V =4.5V, I

GS

17

23

mΩ

V =4V, I

GS

18

24

mΩ

20

30

mΩ

Drain-Source On-State Resistance

V =2.5V, I

GS

24

35

mΩ

Forward Transconductance

g

V =10V,I

FS

DS

11

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

900

PF

lss

Output Capacitance

350

PF

V =8V,V

DS

F=1.0MHz

Reverse Transfer Capacitance

C

150

PF

rss

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

15

nS

d(on)

Turn-on Rise Time

t

100

nS

r

Turn-Off Delay Time

60

nS

V =10V,I

DD

V =4.5V,R

Turn-Off Fall Time

GS

90

nS

Total Gate Charge

Q

20

nC

g

Gate-Source Charge

2.5

nC

V =10V,I

Gate-Drain Charge

DS

=4.5V

3

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =7A

0.83

1.2

V

SD

GS

S

NOTES:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

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