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NE24200 Datasheet(PDF) 1 Page - NEC

Part # NE24200
Description  C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NE24200 Datasheet(HTML) 1 Page - NEC

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©
1996
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32400, NE24200
C to Ka BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET CHIP
DESCRIPTION
NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs
and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable
for commercial systems, industrial and space applications.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
Gate Length : Lg = 0.25
µm
Gate Width : Wg = 200
µm
ORDERING INFORMATION
PART NUMBER
QUALITY GRADE
APPLICATIONS
NE32400
Standard (Grade D)
Commercial
NE24200
Grade C and B (B is special order)
Industrial, space
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
ID
IDSS
mA
Total Power Dissipation
Ptot*
200
mW
Channel Temperature
Tch
175
˚C
Storage Temperature
Tstg
–65 to +175
˚C
* Chip mounted on a Alumina heatsink (size: 3
× 3 × 0.6t)
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Gate to Source Leak Current
IGSO
0.5
10
µAVGS = –3 V
Saturated Drain Current
IDSS
15
40
70
mA
VDS = 2 V, VGS = 0 V
Gate to Source Cutoff Voltage
VGS(off)
–0.2
–0.8
–2.0
V
VDS = 2 V, ID = 100
µA
Transconductance
gm
45
60
mS
VDS = 2 V, ID = 10 mA
Thermal Resistance
Rth*
260
˚C/W
channel to case
Noise Figure
NF
0.6
0.7
dB
VDS = 2 V, ID = 10 mA, f = 12 GHz
Associated Gain
Ga
10.0
11.0
dB
RF performance is determined by packaging and testing 10 chips per wafer.
Wafer rejection criteria for standard devices is 2 rejects per 10 samples.
Document No. P11345EJ2V0DS00 (2nd edition)
(Previous No. TD-2358)
Date Published May 1996 P
Printed in Japan


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