© 1997 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FDH 400 / FDLL 400 Rev. 1.1.0

1

April 2013

FDH 400 / FDLL 400

High Voltage General Purpose Diode

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Note:

1. These ratings are limiting values above which the serviceability of the diode may be impaired.

These ratings are bansed on a maximum junction temperature of 200

°C.

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty

cycle operations.

Thermal Characteristics

Symbol

Parameter

Value

Units

Working Inverse Voltage

150

V

Average Rectified Forward Current

200

mA

DC Forward Current

500

mA

Recurrent Peak Forward Current

600

mA

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 s

1.0

A

Pulse Width = 1.0

μs4.0

A

Storage Temperature Range

-65 to +200

°C

Operating Junction Temperature

175

°C

Symbol

Parameter

Max.

Units

FDH / FDLL 400

Power Dissipation

500

mW

Derate above 25°C

3.33

mW/°C

Thermal Resistance, Junction to Ambient

300

°C/W

LL-34

THE PLACEMENT OF THE EXPANSION GAP

HAS NO RELATIONSHIP TO THE LOCATION

OF THE CATHODE TERMINAL

LL-34 COLOR BAND MARKING

DEVICE

1ST BAND

DO-35

FDLL400

BLACK

Cathode is denoted with a black band

-1st band denotes cathode terminal

and has wider width

SOD80

Cathode Band