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VN2410 Datasheet(PDF) 2 Page - Supertex, Inc |
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VN2410 Datasheet(HTML) 2 Page - Supertex, Inc |
2 / 3 page 2 VN2410 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Electrical Characteristics (T A = 25 O C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions Notes: † I D (continuous) is limited by max rated Tj . Thermal Characteristics Switching Waveforms and Test Circuit 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t r INPUT INPUT OUTPUT 10V V DD R GEN 0V 0V t f BV DSS Drain-to-source breakdown voltage 240 - - V V GS = 0V, ID = 100µA V GS(th) Gate threshold voltage 0.8 - 2.0 V V GS = VDS, ID = 1.0mA I GSS Gate body leakage - - 100 nA V GS = 20V, VDS = 0V I DSS Zero gate voltage drain current - - 10 µA V GS = 0V, VDS = 120V - - 500 V GS = 0V, VDS = 120V, T A = 125°C I D(ON) On-state drain current 1.0 - - A V GS = 10V, VDS = 15V R DS(ON) Static drain-to-source on-state resistance - - 10 Ω V GS = 2.5V, ID = 100mA - - 10 V GS = 10V, ID = 500mA ΔR DS(ON) Change in R DS(ON) with temperature - 1.0 1.4 %/OC V GS = 10V, ID = 500mA G FS Forward transductance 300 - - mmho V DS = 10V, ID = 500mA C ISS Input capacitance - - 125 pF V GS = 0V, V DS = 25V, f = 1.0MHz C OSS Common source output capacitance - - 50 C RSS Reverse transfer capacitance - - 20 t r Rise time - - 8.0 ns V DD = 60V, I D = 400mA, R GEN = 25Ω t d(ON) Turn-on delay time - - 8.0 t f Fall time - - 24 t d(OFF) Turn-off delay time - - 23 V SD Diode forward voltage drop - 1.2 - V V GS = 0V, ISD = 190mA Notes: All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) All A.C. parameters sample tested. 1. 2. Package I D (continuous)† (mA) I D (pulsed) (A) Power Dissipation @T C = 25 O C (W) θ jc (OC/W) θ ja (OC/W) I DR † (mA) I DRM (A) TO-92 190 1.7 1.0 125 170 190 1.7 |
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