SSPL1090

2012.06.05

Version : 1.0

page 1 of 8

www.silikron.com

Main Product Characteristics:

Features and Benefits:

Description:

Absolute max Rating:

Symbol

Parameter

Max.

Units

A

68

70

W

Linear Derating Factor

0.47

W/°C

Drain-Source Voltage

100

V

Gate-to-Source Voltage

±20

V

Single Pulse Avalanche Energy @ L=2.3mH

152

mJ

Avalanche Current @ L=2.3mH

11.5

A

Operating Junction and Storage Temperature Range

-55 to +175

°C

100V

75m

Ω (typ.)

TO-220

Marking and pin

Assignment

Schematic diagram



Advanced Process Technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



175℃ operating temperature

These N-Channel enhancement mode power field effect transistors are produced using silikron

proprietary MOSFET technology. This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

switch mode power supplies.