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NE434S01-T1B Datasheet(PDF) 2 Page - NEC |
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NE434S01-T1B Datasheet(HTML) 2 Page - NEC |
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2 / 12 page  2 NE434S01 ELECTRO-OPTICAL CHARACTERISTICS (TA = 25 qqqqC) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Gate to Source Leak Current ISGO 0.5 10 PAVGS = ð3 V Saturated Drain Current IDSS 20 80 150 mA VDS = 2 V, VGS = 0 V Gate to Source Cutoff Voltage VGS(off) ð0.2 ð0.9 ð2.5 V VDS = 2 V, ID = 100 PA Transconductance gm 70 85 mS VDS = 2 V, ID = 14 mA Noise Figure NF 0.35 0.45 dB VDS = 2 V, ID = 15 mA, Associated Gain Ga 13.0 15.5 dB f = 4 GHz |
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