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AP30N30WI Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP30N30WI Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 4 page Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 30 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 201216053-1/4 Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 AP30N30WI 0 4 8 12 16 0 20406080 Q G , Total Gate Charge (nC) V DS = 120 V V DS = 160 V V DS = 200 V I D =15 A Q VG 10V QGS QGD QG Charge 1 10 100 1000 10000 1 5 9 13 17 21 25 29 V DS ,Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 1 10 100 1000 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T c =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC 0 10 20 30 40 02 46 8 V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =5V |
Similar Part No. - AP30N30WI_14 |
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Similar Description - AP30N30WI_14 |
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