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AP40T10GR Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP40T10GR Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 4 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test BVDSS 100V ▼ Single Drive Requirement RDS(ON) 35mΩ ▼ Fast Switching Characteristic ID 40A Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TC=25℃ A ID@TC=100℃ A IDM A PD@TC=25℃ W TSTG ℃ TJ ℃ Symbol Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.2 ℃ /W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃ /W Data and specifications subject to change without notice Thermal Data Parameter Storage Temperature Range Total Power Dissipation 125 -55 to 175 Operating Junction Temperature Range -55 to 175 Continuous Drain Current, VGS @ 10V 27 Pulsed Drain Current 1 150 Gate-Source Voltage +20 Continuous Drain Current, VGS @ 10V 40 Parameter Rating Drain-Source Voltage 100 RoHS-compliant Product 1 AP40T10GR 200904141 G D S Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-262(R) |
Similar Part No. - AP40T10GR_14 |
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Similar Description - AP40T10GR_14 |
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