BSS84DW-7-F datasheet(2/5 Pages) DIODES

Part #	BSS84DW-7-F

Description	DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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2 / 5 page

BSS84DW

Document number: DS30204 Rev. 17 - 2

2 of 5

www.diodes.com

February 2013

BSS84DW

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

-50

V

Drain-Gate Voltage (Note 5)

VDGR

-50

V

Gate-Source Voltage

Continuous

VGSS

20

V

Drain Current (Note 6)

Continuous

ID

-130

mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

PD

300

mW

Thermal Resistance, Junction to Ambient

RθJA

417

C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

-50

-75



V

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS







-1

-2

-100

µA

nA

VDS = -50V, VGS = 0V, TJ = +25°C

VDS = -50V, VGS = 0V, TJ = +125°C

VDS = -25V, VGS = 0V, TJ = +25°C

Gate-Body Leakage

IGSS



10

nA

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

-0.8

-1.6

-2.0

V

VDS = VGS, ID = -1mA

Static Drain-Source On-Resistance

RDS (ON)



6

10



VGS = -5V, ID = -0.100A

Forward Transconductance

gFS

0.05



S

VDS = -25V, ID = -0.1A

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss



45

pF

VDS = -25V, VGS = 0V, f = 1.0MHz

Output Capacitance

Coss



25

pF

Reverse Transfer Capacitance

Crss



12

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)



10



ns

VDD = -30V, ID = -0.27A,

RGEN = 50, VGS = -10V

Turn-Off Delay Time

tD(OFF)



18



ns

Notes:

5. RGS  20K.

6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,

which can be found on our website at http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

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