BZT52C2V0 - BZT52C51

Document number: DS18004 Rev. 37 - 2

2 of 5

www.diodes.com

September 2012

© Diodes Incorporated

BZT52C2V0 - BZT52C51

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Forward Voltage

0.9

V

Thermal Characteristics

Characteristic

Symbol

Value

Unit

500

mW

370

mW

Thermal Resistance, Junction to Ambient Air (Note 8)

338

°C/W

Thermal Resistance, Junction to Lead (Note 9)

150

°C/W

Operating and Storage Temperature Range

-65 to +150

°C

Type

Number

Marking

Codes

Zener Voltage Range

(Note 10)

Maximum Zener

Impedance

f = 1kHz

Maximum

Reverse

Current

(Note 10)

Temperature

Coefficient

mV/

°C

Test

Current

Nom (V)

Min (V) Max (V)

mA

Ω

mA

uA

V

Min

Max

mA

BZT52C2V0

WY

2.0

1.91

2.09

5

100

600

1.0

150

1.0

-3.5

0

5

BZT52C2V4

WX

2.4

2.2

2.6

5

100

600

1.0

50

1.0

-3.5

0

5

BZT52C2V7

W1

2.7

2.5

2.9

5

100

600

1.0

20

1.0

-3.5

0

5

BZT52C3V0

W2

3.0

2.8

3.2

5

95

600

1.0

10

1.0

-3.5

0

5

BZT52C3V3

W3

3.3

3.1

3.5

5

95

600

1.0

5.0

1.0

-3.5

0

5

BZT52C3V6

W4

3.6

3.4

3.8

5

90

600

1.0

5.0

1.0

-3.5

0

5

BZT52C3V9

W5

3.9

3.7

4.1

5

90

600

1.0

3.0

1.0

-3.5

0

5

BZT52C4V3

W6

4.3

4.0

4.6

5

90

600

1.0

3.0

1.0

-3.5

0

5

BZT52C4V7

W7

4.7

4.4

5.0

5

80

500

1.0

3.0

2.0

-3.5

0.2

5

BZT52C5V1

W8

5.1

4.8

5.4

5

60

480

1.0

2.0

2.0

-2.7

1.2

5

BZT52C5V6

W9

5.6

5.2

6.0

5

40

400

1.0

1.0

2.0

-2

2.5

5

BZT52C6V2

WA

6.2

5.8

6.6

5

10

150

1.0

3.0

4.0

0.4

3.7

5

BZT52C6V8

WB

6.8

6.4

7.2

5

15

80

1.0

2.0

4.0

1.2

4.5

5

BZT52C7V5

WC

7.5

7.0

7.9

5

15

80

1.0

1.0

5.0

2.5

5.3

5

BZT52C8V2

WD

8.2

7.7

8.7

5

15

80

1.0

0.7

5.0

3.2

6.2

5

BZT52C9V1

WE

9.1

8.5

9.6

5

15

100

1.0

0.5

6.0

3.8

7.0

5

BZT52C10

WF

10

9.4

10.6

5

20

150

1.0

0.2

7.0

4.5

8.0

5

BZT52C11

WG

11

10.4

11.6

5

20

150

1.0

0.1

8.0

5.4

9.0

5

BZT52C12

WH

12

11.4

12.7

5

25

150

1.0

0.1

8.0

6.0

10.0

5

BZT52C13

WI

13

12.4

14.1

5

30

170

1.0

0.1

8.0

7.0

11.0

5

BZT52C15

WJ

15

13.8

15.6

5

30

200

1.0

0.1

10.5

9.2

13.0

5

BZT52C16

WK

16

15.3

17.1

5

40

200

1.0

0.1

11.2

10.4

14.0

5

BZT52C18

WL

18

16.8

19.1

5

45

225

1.0

0.1

12.6

12.4

16.0

5

BZT52C20

WM

20

18.8

21.2

5

55

225

1.0

0.1

14.0

14.4

18.0

5

BZT52C22

WN

22

20.8

23.3

5

55

250

1.0

0.1

15.4

16.4

-

5

BZT52C24

WO

24

22.8

25.6

5

70

250

1.0

0.1

16.8

18.4

-

5

BZT52C27

WP

27

25.1

28.9

2

80

300

0.5

0.1

18.9

21.4

-

2

BZT52C30

WQ

30

28.0

32.0

2

80

300

0.5

0.1

21.0

24.4

-

2

BZT52C33

WR

33

31.0

35.0

2

80

325

0.5

0.1

23.1

27.4

-

2

BZT52C36

WS

36

34.0

38.0

2

90

350

0.5

0.1

25.2

30.4

-

2

BZT52C39

WT

39

37.0

41.0

2

130

350

0.5

0.1

27.3

33.4

-

2

BZT52C43

WU

43

40.0

46.0

5

100

700

1.0

0.1

32.0

37.6

-

5

BZT52C47

WV

47

44.0

50.0

5

100

750

1.0

0.1

35.0

42.0

-

5

BZT52C51

WW

51

48.0

54.0

5

100

750

1.0

0.1

38.0

46.6

-

5

Notes:

8. Device mounted on ceramic PCB with copper pad areas 40mm

9. Thermal Resistance measurement obtained via infrared scan method.

10. Short duration pulse test used to minimize self-heating effect.