NE85001 SERIES

2

Drain to Source Voltage

15

V

Gate to Drain Voltage

–18

V

Gate to Source Voltage

–12

V

Total Power Disipation(*)

6.0

W

Drain Current

1.12

A

Gate Current

6.0

mA

Channel Temperature

175

˚C

Storage Temperature

–65 to 175

˚C

RECOMMENDING OPERATION RANDGE

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

Drain to Source Voltage

9–

10

V

Channel Temperature

–

–

130

˚C

Input Power

Gcomp

–

–

3

dBcomp

Gate Resistance

Rg

–

–

1

k

Ω

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Saturated Drain Current

Idss

430

–

860

mA

Vds = 2.5 V, Vgs = 0 V

Pinch-off Voltage

–3.0

–

–1.0

V

Vds = 2.5 V, Ids = 4 mA

Transconductance

gm

–

300

–

mS

Vds = 2.5 V, Ids = Idss

Thermal Resistance

–

–

30

˚C/W

PART NUMBER

PACKAGE CODE

CHARACTERISTIC

SYMBOL

Output Power

Gate to source

Igs

Current

Linear Gain

*

Pin for Pout specification.

** The same conditions as the above except this.

NE8500100

NE8500100-WG

NE8500100-RG

CHIP

MIN.

TYP.

MAX.

28.5

–

–

–2.0

–

2.0

–9–

NE8500199

99

MIN.

TYP.

MAX.

28.5

–

–

–2.0

–

2.0

–9–

UNIT

dBm

mA

dB

TEST CONDITIONS

Pin

≤ 11 dBm (**)

f = 7.2 GHz

Vds = 10 V

Ids = 200 mA set

Rg = 1 k

Ω

Pin = 21.0 dBm(*)