©

1996

DATA SHEET

SILICON POWER TRANSISTOR

NEL2004F02-24

NPN SILICON EPITAXIAL TRANSISTOR

L Band Power Amplifier

Document No. P11582EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

DESCRIPTION AND APPLICATIONS

NEL2004F02-24 of NPN epitaxial microwave power transistors

is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.

It incorporates emitter ballast resistors, gold metallizations and

offers a high degree of reliability.

FEATURES

• High Linear Power and Gain

• Low Internal Modulation Distortion

• High Reliability Gold Metallization

• Emitter Ballasting

• 24 V Operation

OUTLINE DIMENSIONS (Unit: mm)

PARAMETER

SYMBOL

SPECIFIED CONDITION

RATINGS

UNIT

Collector to Base Voltage

45

V

Collector to Emitter Voltage

R = 10

Ω

30

V

Emitter to Base Voltage

3V

Collector to Emitter Voltage

18

V

Collector Current

1.5

A

Power Dissipation

19.4

W

Thermal Resistance

Rth(j-c)

9

˚C/W

Junction Temperature

Tj

200

˚C

Storage Temperature

–65 to 150

˚C

2 ±0.2 3 ±0.2

2 ±0.2

2

× 3.2 ±0.3

φ

11

11

3.6 ±0.5

3.6 ±0.5

3

12.4 ±0.2

9.2 ±0.2

4.6 ±0.2

1 - EMITTER

2 - BASE

3 - COLLECTOR

2