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AP4455GEH-HF Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP4455GEH-HF Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 4 page AP4455GEH-HF Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Maximum Continuous Drain Current Fig 12. Gate Charge Waveform v.s. Case Temperature 4 Q VG -4.5V QGS QGD QG Charge 0 400 800 1200 1600 2000 1 5 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 2 4 6 8 10 0 10 20 30 40 Q G , Total Gate Charge (nC) I D = - 18 A V DS = - 24 V 1 10 100 1000 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) T c =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.0 0.0 1 0.0 0.1 0.2 DUTY=0. SINGLE PULSE Operation in this area limited by RDS(ON) 0 10 20 30 40 25 50 75 100 125 150 T C , Case Temperature ( o C ) |
Similar Part No. - AP4455GEH-HF_14 |
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Similar Description - AP4455GEH-HF_14 |
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