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HM6264 Datasheet(PDF) 9 Page - Hitachi Semiconductor

Part # HM6264
Description  64k SRAM (8-kword x 8-bit) Wide Temperature Range version
Download  17 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

HM6264 Datasheet(HTML) 9 Page - Hitachi Semiconductor

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HM6264BI Series
9
Write Cycle
HM6264BI-10
HM6264BI-12
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write cycle time
t
WC
100
120
ns
Chip selection to end of write
t
CW
80
85
ns
2
Address setup time
t
AS
0—
0—
ns
3
Address valid to end of write
t
AW
80
85
ns
Write pulse width
t
WP
60
70
ns
1, 9
Write recovery time
t
WR
0—
0—
ns
4
WE to output in high-Z
t
WHZ
0
35
0
40
ns
5
Data to write time overlap
t
DW
40
40
ns
Data hold from write time
t
DH
0—
0—
ns
Output active from end of write
t
OW
5—
5—
ns
Output disable to output in high-Z
t
OHZ
0
35
0
40
ns
5
Notes: 1. A write occurs during the overlap of a low
CS1, and high CS2, and a high WE. A write begins at
the latest transition among
CS1 going low,CS2 going high and WE going low. A write ends at the
earliest transition among
CS1 going high CS2 going low and WE going high. Time t
WP is measured
from the beginning of write to the end of write.
2. t
CW is measured from the later of CS1 going low or CS2 going high to the end of write.
3. t
AS is measured from the address valid to the beginning of write.
4. t
WR is measured from the earliest of CS1 or WE going high or CS2 going low to the end of write
cycle.
5. During this period, I/O pins are in the output state, therefore the input signals of the opposite phase
to the outputs must not be applied.
6. If
CS1 goes low simultaneously with WE going low after WE goes low, the outputs remain in high
impedance state.
7. Dout is the same phase of the written data in this write cycle.
8. Dout is the read data of the next address
9. In the write cycle with
OE low fixed, t
WP must satisfy the following equation to avoid a problem of
data bus contention
t
WP ≥ tWHZ max + tDW min.


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