HN58S256A datasheet(5/17 Pages) HITACHI

Part #	HN58S256A

Description	256 k EEPROM (32-kword x 8-bit)

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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5 / 17 page

HN58S256A Series

Capacitance (Ta = 25

°C, f = 1 MHz)

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Input capacitance*

1

Cin

—

6

pF

Vin = 0 V

Output capacitance*

1

Cout

—

12

pF

Vout = 0 V

Note:

1. This parameter is periodically sampled and not 100% tested.

AC Characteristics (Ta = 0 to +70

°C, V

CC = 2.2 to 3.6 V)

Test Conditions

•

Input pulse levels: 0.4 V to 1.9 V (V

CC ≤ 2.7V), 0.4V to 2.4 V (VCC > 2.7 V)

•

Input rise and fall time:

≤ 5 ns

•

Input timing reference levels: 0.8, 1.8 V

•

Output load: 1TTL Gate +100 pF

•

Output reference levels: 1.1 V, 1.1 V (V

CC ≤ 2.7V),1.5 V, 1.5 V (VCC > 2.7 V)

Read Cycle

HN58S256A

-15

-20

Parameter

Symbol

Min

Max

Min

Max

Unit

Test conditions

Address to output delay

t

ACC

—

150

—

200

ns

CE = OE = V

IL, WE = VIH

CE to output delay

t

CE

—

150

—

200

ns

OE = V

IL, WE = VIH

OE to output delay

t

OE

10

80

10

100

ns

CE = V

IL, WE = VIH

Address to output hold

t

OH

0—

0

—

ns

CE = OE = V

IL, WE = VIH

OE (CE) high to output float*

1

t

DF

0

100

0

100

ns

CE = V

IL, WE = VIH

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