HN58V65A Series, HN58V66A Series

Write Cycle 1 (V

Parameter

Symbol

Min*

3

Typ

Max

Unit

Test conditions

Address setup time

t

AS

0

——ns

Address hold time

t

AH

50

——ns

CE to write setup time (WE controlled)

t

CS

0

——ns

CE hold time (WE controlled)

t

CH

0

——ns

WE to write setup time (CE controlled)

t

WS

0

——ns

WE hold time (CE controlled)

t

WH

0

——ns

OE to write setup time

t

OES

0

——ns

OE hold time

t

OEH

0

——ns

Data setup time

t

DS

50

——ns

Data hold time

t

DH

0

——ns

WE pulse width (WE controlled)

t

WP

200

—

—

ns

CE pulse width (CE controlled)

t

CW

200

—

—

ns

Data latch time

t

DL

100

—

—

ns

Byte load cycle

t

BLC

0.3

—

30

µs

Byte load window

t

BL

100

—

—

µs

Write cycle time

t

WC

—

—

10*

4

ms

Time to device busy

t

DB

120

—

—

ns

Write start time

t

DW

0*

5

——ns

Reset protect time*

2

t

RP

100

—

—

µs

Reset high time*

2, 6

t

RES

1—

—

µs

Notes: 1. t

and

are no longer driven.

2. This function is supported by only the HN58V66A series.

3. Use this device in longer cycle than this value.

4. t

device automatically completes the internal write operation within this value.

5. Next read or write operation can be initiated after t

used.

6. This parameter is sampled and not 100% tested.

7. A6 through A12 are page addresses and these addresses are latched at the first falling edge

of

WE.

8. A6 through A12 are page addresses and these addresses are latched at the first falling edge

of

CE.

9. See AC read characteristics.