HN58V256AT-12 datasheet(5/24 Pages) HITACHI

Part #	HN58V256AT-12

Description	256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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5 / 24 page

HN58V256A Series, HN58V257A Series

5

Recommended DC Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

Supply voltage

V

CC

2.7

3.0

5.5

V

SS

00

0V

Input voltage

V

IL

–0.3*

1

—

0.6

V

IH

1.9*

2

—V

CC + 0.3*

3

V

H*

4

V

CC – 0.5

—

V

CC + 1.0

V

Operating temperature

Topr

0

—

70

°C

Notes: 1. V

IL min:

–1.0 V for pulse width

≤ 50 ns.

2. V

IH min for VCC = 3.6 to 5.5 V is 2.4 V.

3. V

IH max:

V

CC + 1.0 V for pulse width ≤ 50 ns.

4. This function is supported by only the HN58V257A series.

DC Characteristics (Ta = 0 to +70°C, V

CC = 2.7 to 5.5 V)

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Input leakage current

I

LI

——

2*

1

µAV

CC = 5.5 V, Vin = 5.5 V

Output leakage current

I

LO

——

2

µAV

CC = 5.5 V, Vout = 5.5/0.4 V

Standby V

CC current

I

CC1

——

20

µA

CE = V

CC

I

CC2

——

1

mA

CE = V

IH

Operating V

CC current

I

CC3

—

8

mA

Iout = 0 mA, Duty = 100%,

Cycle = 1

µs at V

CC = 3.6 V

—

12

mA

Iout = 0 mA, Duty = 100%,

Cycle = 1 ns at V

CC = 5.5 V

—

12

mA

Iout = 0 mA, Duty = 100%,

Cycle = 120

µs at V

CC = 3.6 V

—

30

mA

Iout = 0 mA, Duty = 100%,

Cycle = 120 ns at V

CC = 5.5 V

Output low voltage

V

OL

—

0.4

V

I

OL = 2.1 mA

Output high voltage

V

OH

V

CC × 0.8

—

V

I

OH = –400 µA

Note:

1. I

LI on RES = 100 µA max (only the HN58V257A series)

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HN58V256AT-12 Datasheet(PDF) 5 Page - Hitachi Semiconductor

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