Electronic Components Datasheet Search |
|
AP4924GM Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
|
AP4924GM Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 6 page Advanced Power Dual N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement BVDSS 20V ▼ Low On-resistance RDS(ON) 35mΩ ▼ Fast Switching ID 6A Description Absolute Maximum Ratings Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TA=25℃ Continuous Drain Current 3 A ID@TA=70℃ Continuous Drain Current 3 A IDM Pulsed Drain Current 1 A PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range ℃ TJ Operating Junction Temperature Range ℃ Symbol Value Unit Rthj-amb Maximum Thermal Resistance, Junction-ambient 3 62.5 ℃ /W Data and specifications subject to change without notice Parameter 1 200904031 AP4924GM Thermal Data 20 -55 to 150 Rating 2 RoHS-compliant Product Parameter -55 to 150 +12 6 4.8 35 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S1 G1 S2 G2 D1 D1 D2 D2 SO-8 G2 D2 S2 G1 D1 S1 |
Similar Part No. - AP4924GM_14 |
|
Similar Description - AP4924GM_14 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |