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AP6680CGYT-HF Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP6680CGYT-HF Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 4 page AP6680CGYT-HF Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Maximum Continuous Drain Fig 12. Gate Charge Waveform Current v.s. Ambient Temperature 4 Q VG 4.5V QGS QGD QG Charge 0 2 4 6 8 10 04 8 12 16 20 Q G , Total Gate Charge (nC) I D =12 A V DS =15V 0 200 400 600 800 1000 1200 1 5 9 131721 2529 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthia=210 ℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) T A =25 o C Single Pulse 100us 1ms 10ms 100ms 1s DC Operation in this area limited by RDS(ON) 0 4 8 12 16 20 25 50 75 100 125 150 T A , Ambient Temperature ( o C ) |
Similar Part No. - AP6680CGYT-HF_14 |
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Similar Description - AP6680CGYT-HF_14 |
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