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F11K120 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # F11K120
Description  LowVF-Rectifier with Overvoltage Protection
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

F11K120 Datasheet(HTML) 1 Page - Diotec Semiconductor

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F11K120
F11K120
Protectifiers® – LowVF-Rectifier with Overvoltage Protection
Protectifiers® – LowVF-Gleichrichter mit Überspannungs-Schutz
Version 2013-12-06
Dimensions - Maße [mm]
Nominal current
Nennstrom
11 A
Stand off voltage
Sperrspannung
120 V
Plastic case
Kunststoffgehäuse
Ø 5.4 x 7.5 [mm]
(~ DO-201)
Weight approx. – Gewicht ca.
1.0 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Low forward losses, high reverse pulse power capability
Niedrige Durchlass-Verluste, hohe Sperr-Belastbarkeit
Maximum ratings and Charactistics (TJ = 25°C)
Grenz- und Kennwerte (TJ = 25°C)
Type
Typ
Stand-off voltage
Sperrspannung
Max. rev. current
Max. Sperrstrom
at/bei VWM
Breakdown voltage
Abbruch-Spannung
Forward voltage
Durchlass-Spannung
VF [V]
VWM [V]
ID [µA]
VBR min [V]
@ IT [mA]
IF = 5A
IF = 11A
F11K120
120
5
130
5
< 0.97
< 1.10
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TL = 50°C
IFAV
11 A 1)
Total steady state power dissipation
Gesamtverlustleistung im Dauerbetrieb
TA = 50°C
P
tot
5 W
Repetitive peak forward current – Periodischer Spitzenstrom
f > 15 Hz
IFRM
50 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
250/280 A
Peak pulse power dissipation
10/1000µs pulse 2)
Impuls-Verlustleistung
TA = 25°C
PPPM
700 W
Max. reverse peak pulse current
8/20µs pulse 3)
Max. Impuls-Strom in Sperr-Richtung
TA = 25°C
IPPM
100 A
Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
200 A2s
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Tj
Tj
-50...+175°C
+200°C
Storage temperature – Lagerungstemperatur
TS
-50...+175°C
1
Valid, if leads are kept at TL at a distance of 3 mm from case
Gültig, wenn die Anschlussdrähte in 3 mm Abstand vom Gehäuse auf TL gehalten werden
2
See curve I
PP = f (t) 10/1000µs – Siehe Kurve IPP = f (t) 10/1000µs
3
See curve I
PP = f (t) 8/20µs – Siehe Kurve IPP = f (t) 8/20µs
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø
±0.05
1.2
Ø
±0.1
5.4


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