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F11K120 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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F11K120 Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page F11K120 F11K120 Protectifiers® – LowVF-Rectifier with Overvoltage Protection Protectifiers® – LowVF-Gleichrichter mit Überspannungs-Schutz Version 2013-12-06 Dimensions - Maße [mm] Nominal current Nennstrom 11 A Stand off voltage Sperrspannung 120 V Plastic case Kunststoffgehäuse Ø 5.4 x 7.5 [mm] (~ DO-201) Weight approx. – Gewicht ca. 1.0 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Low forward losses, high reverse pulse power capability Niedrige Durchlass-Verluste, hohe Sperr-Belastbarkeit Maximum ratings and Charactistics (TJ = 25°C) Grenz- und Kennwerte (TJ = 25°C) Type Typ Stand-off voltage Sperrspannung Max. rev. current Max. Sperrstrom at/bei VWM Breakdown voltage Abbruch-Spannung Forward voltage Durchlass-Spannung VF [V] VWM [V] ID [µA] VBR min [V] @ IT [mA] IF = 5A IF = 11A F11K120 120 5 130 5 < 0.97 < 1.10 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TL = 50°C IFAV 11 A 1) Total steady state power dissipation Gesamtverlustleistung im Dauerbetrieb TA = 50°C P tot 5 W Repetitive peak forward current – Periodischer Spitzenstrom f > 15 Hz IFRM 50 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 250/280 A Peak pulse power dissipation 10/1000µs pulse 2) Impuls-Verlustleistung TA = 25°C PPPM 700 W Max. reverse peak pulse current 8/20µs pulse 3) Max. Impuls-Strom in Sperr-Richtung TA = 25°C IPPM 100 A Rating for fusing, t < 10 ms – Grenzlastintegral, t < 10 ms TA = 25°C i2t 200 A2s Junction temperature – Sperrschichttemperatur in DC forward mode – bei Gleichstrom-Durchlassbetrieb Tj Tj -50...+175°C +200°C Storage temperature – Lagerungstemperatur TS -50...+175°C 1 Valid, if leads are kept at TL at a distance of 3 mm from case Gültig, wenn die Anschlussdrähte in 3 mm Abstand vom Gehäuse auf TL gehalten werden 2 See curve I PP = f (t) 10/1000µs – Siehe Kurve IPP = f (t) 10/1000µs 3 See curve I PP = f (t) 8/20µs – Siehe Kurve IPP = f (t) 8/20µs © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø ±0.05 1.2 Ø ±0.1 5.4 |
Similar Part No. - F11K120_13 |
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Similar Description - F11K120_13 |
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