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FE3B Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # FE3B
Description  Superfast Switching Silicon Rectifier Diodes
Download  2 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

FE3B Datasheet(HTML) 1 Page - Diotec Semiconductor

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FE3A ... FE3G
FE3A ... FE3G
Superfast Switching Silicon Rectifier Diodes
Superschnelle Silizium-Gleichrichterdioden
Version 2013-10-15
Dimensions - Maße [mm]
Nominal current
Nennstrom
3 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50...400 V
Plastic case
Kunststoffgehäuse
~ DO-201
Weight approx.
Gewicht ca.
1 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
Forward voltage
Durchlass-Spannung
VF at/bei IF = 3 A
FE3A
50
50
< 0.98
FE3B
100
100
< 0.98
FE3D
200
200
< 0.98
FE3G
400
400
< 1.30
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 75°C
IFAV
3 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
30 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
125/135 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
78 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 1.2±0.05
Ø 4.5+0.1
-0.3


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