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MUR440 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # MUR440
Description  Ultrafast Switching Silicon Rectifier Diodes
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

MUR440 Datasheet(HTML) 1 Page - Diotec Semiconductor

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MUR420 ... MUR460
MUR420 ... MUR460
Ultrafast Switching Silicon Rectifier Diodes – Ultraschnelle Silizium-Gleichrichterdioden
Version 2014-08-21
Dimensions - Maße [mm]
Nominal current
Nennstrom
4 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
200...600 V
Plastic case
Kunststoffgehäuse
Ø 5.4 x 7.5 [mm]
Weight approx.
Gewicht ca.
1.0 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
MUR420
200
200
MUR440
400
400
MUR460
600
600
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
4 A 1)
Repetitive peak forward current
MUR420
f > 15 Hz
IFRM
22 A 1)
Periodischer Spitzenstrom
MUR440 ... 460
f > 15 Hz
IFRM
20 A 1)
Peak forward surge current, 50/60 Hz half sine-wave MUR420
TA = 25°C
IFSM
110 / 125 A
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
MUR440 ... 460
TA = 25°C
IFSM
100 / 110 A
Rating for fusing
MUR420
TA = 25°C
i2t
60 A2s
Grenzlastintegral, t < 10 ms
MUR440 ... 460
TA = 25°C
i2t
50 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
Characteristics
Kennwerte
Type
Typ
Reverse recovery time
Sperrverzugszeit
Reverse recovery time
Sperrverzugszeit
Forward voltage
Durchlass-Spannung
trr [ns] 2)
trr [ns] 3)
VF [V]
at / bei
IF = [A]
MUR420
< 25
< 35
< 0.890
4
MUR440 ... MUR460
< 50
< 75
< 1.28
4
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
IF = 0.5 A through/über IR = 1 A to/auf IR = 0.25 A
3
IF = 1.0 A, di/dt = -50 A/µs, VR = 30 V
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 1.2±0.05
Ø 5.4±0.1


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