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P6SMB480 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # P6SMB480
Description  bidirectional Transient Voltage Suppressor Diodes
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

P6SMB480 Datasheet(HTML) 1 Page - Diotec Semiconductor

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P6SMB220 ... P6SMB550CA
P6SMB220 ... P6SMB550CA
Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden für die Oberflächenmontage
Version 2014-10-13
Dimensions - Maße [mm]
Peak pulse power dissipation
Impuls-Verlustleistung
600 W
Nominal breakdown voltage
Nominale Abbruch-Spannung
220...550 V
Plastic case
Kunststoffgehäuse
~ SMB
~ DO-214AA
Weight approx. – Gewicht ca.
0.1 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rollen
For bidirectional types, suppressor characteristics apply in both directions; add suffix “C” or “CA”.
Für bidirektionale Dioden gelten die Begrenzer-Eigenschaften in beiden Richtungen;
es ist das Suffix “C” oder “CA” zu ergänzen.
TVS diodes having stand-off voltage VWM = 5.0 ... 170 V:
please refer to datasheet P6SMBJ5.0 ... 170CA
TVS-Dioden mit Sperrspannung VWM = 5.0 ... 170 V:
siehe Datenblatt P6SMBJ5.0 ... 170CA
Maximum ratings and Characteristics
Grenz- und Kennwerte
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
TA = 25°C
PPPM
600 W 1)
Steady state power dissipation
Verlustleistung im Dauerbetrieb
TT = 75°C
P
M(AV)
5 W
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
TA = 25°C
I
FSM
100 A 2)
Max. instantaneous forward voltage
Augenblickswert der Durchlass-Spannung
I
F = 25 A
VF
< 3.0 V 2)
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 45 K/W 3)
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
RthT
< 15 K/W
1
Non-repetitive pulse see curve I
PP = f (t) / PPP = f (t)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve I
PP = f (t) / PPP = f (t)
2
Unidirectional diodes only – Nur für unidirektionale Dioden
3
Mounted on P.C. board with 50 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
1.1
Type
Typ
4.6
± 0.5
5.4
± 0.5
0.15


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