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TGL4168 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # TGL4168
Description  Transient Voltage Suppressor Diodes
Download  4 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

TGL4168 Datasheet(HTML) 1 Page - Diotec Semiconductor

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TGL41-6.8 ... TGL41-440CA, TGL41-520C
TGL41-6.8 ... TGL41-440CA, TGL41-520C
Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden für die Oberflächenmontage
Version 2013-08-23
Dimensions - Maße [mm]
Peak pulse power dissipation
Maximale Verlustleistung
400 W
Nominal breakdown voltage
Nominale Abbruch-Spannung
6.8...520 V
Plastic case MELF
Kunststoffgehäuse MELF
DO-213AB
Weight approx. – Gewicht ca.
0.12 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
For bidirectional types (add suffix “C” or “CA”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (ergänze Suffix “C” oder “CA”) gelten die elektrischen Werte in beiden Richtungen.
Maximum ratings and Characteristics
Grenz- und Kennwerte
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
TA = 25°C
PPPM
400 W 1)
Steady state power dissipation
Verlustleistung im Dauerbetrieb
TA = 25°C
P
M(AV)
1 W 2)
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
TA = 25°C
I
FSM
40 A 3)
Max. instantaneous forward voltage
Augenblickswert der Durchlass-Spannung
I
F = 25 A
V
BR ≤ 200 V
V
BR > 200 V
VF
VF
< 3.5 V 3)
< 6.5 V 3)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 45 K/W 2)
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
RthT
< 10 K/W
1
Non-repetitive pulse see curve I
PP = f (t) / PPP = f (t)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve I
PP = f (t) / PPP = f (t)
2
Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
3
Unidirectional diodes only – Nur für unidirektionale Dioden
© Diotec Semiconductor AG
http://www.diotec.com/
1


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