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2N3446 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N3446 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com 2 Silicon NPN Power Transistors 2N3446 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0 100 V VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.3A 1.2 V VCEsat-2 Collector-emitter saturation voltage IC=7A;IB=1.5A 3.0 V VBE Base-emitter on voltage IC=3A ; VCE=5V 1.5 V ICEO Collector cut-off current VCE=100V; IB=0 0.7 mA ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=3A ; VCE=5V 20 60 hFE-2 DC current gain IC=7A ; VCE=5V 4 |
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