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FCH043N60 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FCH043N60 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page ©2014 Fairchild Semiconductor Corporation FCH043N60 Rev. C0 www.fairchildsemi.com 1 April 2014 FCH043N60 N-Channel SuperFET® II MOSFET 600 V, 75 A, 43 m Ω Features •650 V @ TJ = 150°C •Typ. RDS(on) = 37 mΩ • Ultra Low Gate Charge (Typ. Qg = 163 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF) • 100% Avalanche Tested •RoHS Compliant Applications • Telecom / Sever Power Supplies • Industrial Power Supplies Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. G D S TO-247 G S D Absolute Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FCH043N60 Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage - DC ±20 V - AC (f > 1 Hz) ±30 ID Drain Current - Continuous (TC = 25oC) 75 A - Continuous (TC = 100oC) 47.5 IDM Drain Current - Pulsed (Note 1) 225 A EAS Single Pulsed Avalanche Energy (Note 2) 2025 mJ IAR Avalanche Current (Note 1) 15 A EAR Repetitive Avalanche Energy (Note 1) 5.92 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25oC) 592 W - Derate Above 25oC4.74 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCH043N60 Unit RθJC Thermal Resistance, Junction to Case, Max. 0.21 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 40 |
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