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DCR4420H65 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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DCR4420H65 Datasheet(HTML) 7 Page - Dynex Semiconductor |
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7 / 10 page  SEMICONDUCTOR DCR4420H65 7/10 www.dynexsemi.com Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current Fig.12 Stored charge Fig.13 Reverse recovery current 0 10 20 30 40 50 60 70 1 10 100 Number of cycles at 50Hz Conditions: Tj = 125°C VR = 0 Pulse width = 10ms 0 5 10 15 20 25 30 0 20 40 60 80 100 120 140 160 180 200 220 240 260 1 10 100 Pulse width, t p - (ms) ITSM I2t Conditions: Tj = 125°C VR = 0 0 5000 10000 15000 0 2 4 6 8 10 Rate of decay of on state current, di/dt - (A/µs) Q Smax = 4999.6*(di/dt) 0.4722 Q Smin = 2304.6*(di/dt) 0.5578 Conditions: T j = 125°C V peak ~ 3900V V RM ~ 2600V snubber as appropriate to control reverse volts 0 100 200 300 0 2 4 6 8 10 Rate of decay of on state current, di/dt - (A/µs) I RR max = 52.041*(di/dt) 0.7865 I RRmin = 36.96*(di/dt) 0.8317 Conditions: T j = 125°C V peak ~ 3900V V RM ~ 2600V snubber as appropriate to control reverse volts |
Similar Part No. - DCR4420H65 |
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Similar Description - DCR4420H65 |
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