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DIM500GCM33-TS000 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DIM500GCM33-TS000 Datasheet(HTML) 4 Page - Dynex Semiconductor |
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4 / 8 page  DIM500GCM33-TS000 4/8 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 500A VGE = ±15V VCE = 1800V RG(ON) = 4.7 RG(OFF) = 4.7 Cge = 100nF LS ~ 100nH 2700 ns tf Fall time 520 ns EOFF Turn-off energy loss 1000 mJ td(on) Turn-on delay time 1000 ns tr Rise time 400 ns EON Turn-on energy loss 650 mJ Qrr Diode reverse recovery charge IF = 500A VCE = 1800V dIF/dt = 1400A/μs 285 μC Irr Diode reverse recovery current 310 A Erec Diode reverse recovery energy 350 mJ Tcase = 125°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 500A VGE = ±15V VCE = 1800V RG(ON) = 4.7 RG(OFF) = 4.7 Cge = 100nF LS ~ 100nH 2750 ns tf Fall time 570 ns EOFF Turn-off energy loss 1100 mJ td(on) Turn-on delay time 1020 ns tr Rise time 420 ns EON Turn-on energy loss 850 mJ Qrr Diode reverse recovery charge IF = 500A VCE = 1800V dIF/dt = 1400A/μs 470 μC Irr Diode reverse recovery current 390 A Erec Diode reverse recovery energy 600 mJ Tcase = 150°C unless stated otherwise Symbol Parameter Test Conditions Min Typ. Max Units td(off) Turn-off delay time IC = 500A VGE = ±15V VCE = 1800V RG(ON) = 4.7 RG(OFF) = 4.7 Cge = 100nF LS ~ 100nH 2800 ns tf Fall time 550 ns EOFF Turn-off energy loss 1150 mJ td(on) Turn-on delay time 1030 ns tr Rise time 430 ns EON Turn-on energy loss 950 mJ Qrr Diode reverse recovery charge IF = 500A VCE = 1800V dIF/dt = 1400A/μs 535 μC Irr Diode reverse recovery current 400 A Erec Diode reverse recovery energy 650 mJ |
Similar Part No. - DIM500GCM33-TS000 |
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