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DIM500GDM33-TS000 Datasheet(PDF) 1 Page - Dynex Semiconductor |
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DIM500GDM33-TS000 Datasheet(HTML) 1 Page - Dynex Semiconductor |
1 / 8 page DIM500GDM33-TS000 Dual Switch IGBT Module Replaces DS6097-2 DS6097-3 September 2014 (LN31961) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 1/8 www.dynexsemi.com FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability High Current Density Enhanced DMOS SPT Isolated AlSiC Base with AlN Substrates APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A. The DIM500GDM33-TS000 is a single switch 3300V, n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10μs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM500GDM33-TS000 Note: When ordering, please use the complete part number KEY PARAMETERS VCES 3300V VCE(sat) * (typ) 2.2V IC (max) 500A IC(PK) (max) 1000A * Measured at the auxiliary terminals Fig. 1 Circuit configuration Outline type code: G (See Fig. 11 for further information) Fig. 2 Package 8(E 2) 9(G 2) 10(C 2) 6(G 1) 5(C 1) 3(C1) 7(E 1) 4(E2) 2(C) 1(E1) |
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