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AP9930AGM Datasheet(PDF) 4 Page - Advanced Power Electronics Corp. |
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AP9930AGM Datasheet(HTML) 4 Page - Advanced Power Electronics Corp. |
4 / 7 page AP9930AGM N-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 4 0 4 8 12 16 20 00 11 22 V DS , Drain-to-Source Voltage (V) T A =25 o C 10V 7.0V 6.0V 5.0V V G =4.0V 0 4 8 12 16 20 01 234 V DS , Drain-to-Source Voltage (V) T A =150 o C 10V 7.0V 6.0V 5.0V V G =4.0V 25 30 35 40 45 24 68 10 V GS , Gate-to-Source Voltage (V) I D =3A T A =25 ℃ 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =5A V G =10V 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 T j ,Junction Temperature ( o C) 0 2 4 6 8 0.1 0.3 0.5 0.7 0.9 1.1 1.3 V SD , Source-to-Drain Voltage (V) T j =25 o C T j =150 o C |
Similar Part No. - AP9930AGM_14 |
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Similar Description - AP9930AGM_14 |
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