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2N6654 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N6654 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon NPN Power Transistors 2N6654 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 350 V V(BR)CBO Collector-emitter breakdown voltage IC=1mA ; IE=0 500 V VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=2A 1.8 V VCEsat-2 Collector-emitter saturation voltage IC=15A; IB=3A 2.2 V VBEsat Base-emitter saturation voltage IC=15A; IB=3A 1.8 V ICEV Collector cut-off current VCE=500V;VBE(off)=-1.5V TC=150℃ 0.1 2.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 50 hFE -2 DC current gain IC=10A ; VCE=15V 10 |
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