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2SA483 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA483 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SA483 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -150 V V(BR)CBO Collector-base breakdown voltage IC=-0.5mA ;IE=0 -150 V VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.8 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-10V -1.8 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-0.1A ; VCE=-10V 30 240 COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 50 pF fT Transition frequency IC=-0.1A ; VCE=-10V 10 MHz hFE Classifications R O Y 30-80 70-140 120-240 |
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