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AP9985GM Datasheet(PDF) 3 Page - Advanced Power Electronics Corp. |
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AP9985GM Datasheet(HTML) 3 Page - Advanced Power Electronics Corp. |
3 / 5 page AP9985GM Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 3 0 10 20 30 40 50 012 34 V DS , Drain-to-Source Voltage (V) V G = 4.0 V 10V 6.0V 5.0V 4.5V T A =25 o C 0 10 20 30 40 50 01 23 4 V DS , Drain-to-Source Voltage (V) T A = 150 o C 10V 6.0V 5.0V 4.5V V G = 4 .0 V 10 20 30 40 50 60 70 2468 10 V GS , Gate-to-Source Voltage (V) I D =10A T A =25 ℃ 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 T j , Junction Temperature ( o C) I D =10A V G =10V 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 T j , Junction Temperature (oC) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) T j =25 o C T j =150 o C |
Similar Part No. - AP9985GM_14 |
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Similar Description - AP9985GM_14 |
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