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IRFZ34NSTRL Datasheet(PDF) 2 Page - International Rectifier |
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IRFZ34NSTRL Datasheet(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRFZ34NS/L ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA RDS(ON) Static Drain-to-Source On-Resistance ––– ––– 0.040 Ω VGS = 10V, ID = 16A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 6.5 ––– ––– S VDS = 25V, ID = 16A ––– ––– 25 VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 34 ID = 16A Qgs Gate-to-Source Charge ––– ––– 6.8 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 14 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 7.0 ––– VDD = 28V tr Rise Time ––– 49 ––– ID = 16A td(off) Turn-Off Delay Time ––– 31 ––– RG = 18Ω tf Fall Time ––– 40 ––– RD = 1.8 Ω, See Fig. 10
Between lead, and center of die contact Ciss Input Capacitance ––– 700 ––– VGS = 0V Coss Output Capacitance ––– 240 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 5 IDSS Drain-to-Source Leakage Current IGSS ns µA nA nH LS Internal Source Inductance ––– 7.5 ––– Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 16 A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 16A, VGS = 0V trr Reverse Recovery Time ––– 57 86 ns TJ = 25°C, IF = 16A Qrr Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs
ton Forward Turn-On Time Source-Drain Ratings and Characteristics Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– 100 ––– ––– 29 A S D G VDD = 25V, starting TJ = 25°C, L = 610µH RG = 25Ω, IAS = 16A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFZ34N data and test conditions |
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