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AT-32063-TR1 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard) |
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AT-32063-TR1 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard) |
2 / 8 page 4-64 AT-32063 Absolute Maximum Ratings[1] Absolute Symbol Parameter Units Maximum V EBO Emitter-Base Voltage V 1.5 V CBO Collector-Base Voltage V 11 V CEO Collector-Emitter Voltage V 5.5 I C Collector Current mA 40 P T Power Dissipation [2,3] mW 150 T j Junction Temperature °C 150 T STG Storage Temperature °C -65 to 150 Thermal Resistance[2]: θjc =370°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface = 25°C. 3. Derate at 2.7 mW/ °C for T C > 94.5°C. 4. 150 mW per device. Electrical Specifications, T A = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. NF Noise Figure; V CE = 2.7 V, IC = 5 mA f = 0.9 GHz dB 1.1[2] 1.4[2] G A Associated Gain; V CE = 2.7 V, IC = 5 mA f = 0.9 GHz dB 12.5[2] 14.5[2] h FE Forward Current Transfer Ratio; V CE = 2.7 V, IC = 5 mA — 50 270 I CBO Collector Cutoff Current; V CB = 3 V µA 0.2 I EBO Noise Figure; V EB = 1 V µA 1.5 Notes: 1. All data is per individual transistor. 2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB; output loss=0.3 dB. W = 20 L = 60 W = 10 L = 450 W = 10 L = 100 TEST CIRCUIT BOARD MATERIAL = 0.047 GETEK ( ε = 4.3) DIMENSIONS IN MILS NOT TO SCALE 50 Ω 50 Ω Figure 1. Test circuit for Noise Figure and Associated Gain. This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match. |
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