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AT-41411-TR1 Datasheet(PDF) 1 Page - Agilent(Hewlett-Packard) |
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AT-41411-TR1 Datasheet(HTML) 1 Page - Agilent(Hewlett-Packard) |
1 / 5 page 4-109 Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 7.0 GHz Typical fT • Low Cost Surface Mount Plastic Package • Tape-and-Reel Packaging Option Available[1] AT-41411 SOT-143 Plastic Note: 1. Refer to “Tape-and-Reel Packaging for Semiconductor Devices”. Description Hewlett-Packard’s AT-41411 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41411 is housed in a low cost low parasitic 4 lead SOT-143 surface mount package. The SOT-143 is an industry standard and is compatible with high volume surface mount assembly techniques. The 4 micron emitter- to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω in the 1 to 2 GHz frequency range, makes this device easy to use as a low noise amplifier. The AT-41411 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device. Pin Connections GND OUTPUT INPUT VCC 5965-8924E |
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