AN-4163 datasheet(9/10 Pages) FAIRCHILD

Part #	AN-4163

Description	Shielded Gate PowerTrench MOSFET Datasheet Explanation

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

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9 / 10 page

AN-4163

APPLICATION NOTE

www.fairchildsemi.com

Rev. 1.0.1

• 10/23/14

9

The turn-on delay, td(on), is defined as the time to charge the

input capacitance, Ciss, before the ID flows. The rise time, tr,

is the time to discharge output capacitance, Coss, after the

MOSFET conducts the ID set by the resistor load, RD. In the

same way, the turn-off delay, td(off), is the time to discharge

Ciss after the MOSFET is turned off. The fall time, tf, is the

time to charge the output capacitance, Coss, through the load

resistor. Figure 19 and Figure 20 show the switching time

test circuit and simple waveforms, respectively.

DUT

RD

RGEN

Figure 19. Switching Time Test Circuit

VDS

90%

10%

VGS

Td(on)

Tr

Td(off) Tf

Figure 20. Switching Waveforms

15. Drain-to-Source Diode

Characteristics

Like Table 14, the datasheet gives drain to source diode

characteristics such as the source to drain diode forward

voltage VSD, the reverse recovery time trr, and the reverse

recovery charge Qrr.

Table 14. Drain-to-Source Diode Characteristics Parameter

Symbol

Parameter

Conditions

Typ.

Max.

Unit

VSD

Source-to-Drain Diode Forward Voltage

VGS = 0 V, IS = 2.1 A

0.74

1.20

V

VGS = 0 V, IS = 13 A

0.81

1.30

trr

Reverse-Recovery Time

IF = 13 A, di/dt = 100 A/µs

64

102

ns

Qrr

Reverse-Recovery Charge

102

164

nC

The forward voltage of the intrinsic source-to-drain diode or

the body diode is measured at the specific reverse drain

current, IS. Figure 21 shows the IS as the function of body

diode forward voltage, VSD, at given junction temperatures,

TJ. As the TJ increases, the VDS is reduced at the fixed IS due

to its negative temperature coefficient.

Figure 21. Source-to-Drain Diode Forward Voltage

vs. Source Current

When the body diode is reversely biased right after its

forward conduction, it cannot regain the reverse blocking

capability until minority charge carriers stored in the body

diode are recombined. It results in the reverse-recovery

current flow, Irr, through the body diode. The amount of

time it takes body diode to recover is the reverse-recovery

time, trr. The reverse-recovery charge, Qrr, is the integral of

Irr over the trr. Figure 22 and Figure 23 show the reverse-

recovery test circuit and waveforms. Two consecutive gate

signals are applied to the driver MOSFET. With the first

turn-on gate signal, the inductor, L, charges the energy

through the driver MOSFET. Once the driver MOSFET is

turned off, the inductor current starts flowing through the

body diode of the DUT MOSFET. As the following second

gate signal to the driver MOSFET is applied, the forward

current of the body diode starts decreasing and is

commutated to the driver MOSFET. The IS decreases at a

current slope, di/dt, and crosses zero to the Irr. The

decreasing slop, di/dt, of the recovery current is of

importance because it determines trr and Irr. Typical and

maximum values of Qrr and trr are listed in Table 14.

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