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AN-4163 Datasheet(PDF) 9 Page - Fairchild Semiconductor |
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AN-4163 Datasheet(HTML) 9 Page - Fairchild Semiconductor |
9 / 10 page AN-4163 APPLICATION NOTE © 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.1 • 10/23/14 9 The turn-on delay, td(on), is defined as the time to charge the input capacitance, Ciss, before the ID flows. The rise time, tr, is the time to discharge output capacitance, Coss, after the MOSFET conducts the ID set by the resistor load, RD. In the same way, the turn-off delay, td(off), is the time to discharge Ciss after the MOSFET is turned off. The fall time, tf, is the time to charge the output capacitance, Coss, through the load resistor. Figure 19 and Figure 20 show the switching time test circuit and simple waveforms, respectively. DUT RD RGEN Figure 19. Switching Time Test Circuit VDS 90% 10% VGS Td(on) Tr Td(off) Tf Figure 20. Switching Waveforms 15. Drain-to-Source Diode Characteristics Like Table 14, the datasheet gives drain to source diode characteristics such as the source to drain diode forward voltage VSD, the reverse recovery time trr, and the reverse recovery charge Qrr. Table 14. Drain-to-Source Diode Characteristics Parameter Symbol Parameter Conditions Typ. Max. Unit VSD Source-to-Drain Diode Forward Voltage VGS = 0 V, IS = 2.1 A 0.74 1.20 V VGS = 0 V, IS = 13 A 0.81 1.30 trr Reverse-Recovery Time IF = 13 A, di/dt = 100 A/µs 64 102 ns Qrr Reverse-Recovery Charge 102 164 nC The forward voltage of the intrinsic source-to-drain diode or the body diode is measured at the specific reverse drain current, IS. Figure 21 shows the IS as the function of body diode forward voltage, VSD, at given junction temperatures, TJ. As the TJ increases, the VDS is reduced at the fixed IS due to its negative temperature coefficient. Figure 21. Source-to-Drain Diode Forward Voltage vs. Source Current When the body diode is reversely biased right after its forward conduction, it cannot regain the reverse blocking capability until minority charge carriers stored in the body diode are recombined. It results in the reverse-recovery current flow, Irr, through the body diode. The amount of time it takes body diode to recover is the reverse-recovery time, trr. The reverse-recovery charge, Qrr, is the integral of Irr over the trr. Figure 22 and Figure 23 show the reverse- recovery test circuit and waveforms. Two consecutive gate signals are applied to the driver MOSFET. With the first turn-on gate signal, the inductor, L, charges the energy through the driver MOSFET. Once the driver MOSFET is turned off, the inductor current starts flowing through the body diode of the DUT MOSFET. As the following second gate signal to the driver MOSFET is applied, the forward current of the body diode starts decreasing and is commutated to the driver MOSFET. The IS decreases at a current slope, di/dt, and crosses zero to the Irr. The decreasing slop, di/dt, of the recovery current is of importance because it determines trr and Irr. Typical and maximum values of Qrr and trr are listed in Table 14. |
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