AT-41485 datasheet(2/5 Pages) HP

Part #	AT-41485

Description	Up to 6 GHz Low Noise Silicon Bipolar Transistor

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AT-41485 Absolute Maximum Ratings

Absolute

Symbol

Parameter

Units

Maximum[1]

VEBO

Emitter-Base Voltage

V

1.5

VCBO

Collector-Base Voltage

V

20

VCEO

Collector-Emitter Voltage

V

12

IC

Collector Current

mA

60

PT

Power Dissipation [2,3]

mW

500

Tj

Junction Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to 150

Thermal Resistance[2,4]:

θ

jc = 155°C/W

Notes:

1. Permanent damage may occur if

any of these limits are exceeded.

2. TCASE = 25°C.

3. Derate at 6.5 mW/

°C for T

C > 73°C.

4. See MEASUREMENTS section

“Thermal Resistance” for more

information.

Electrical Specifications, TA = 25°C

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

|S21E|

2

Insertion Power Gain; VCE = 8 V, IC = 25 mA

f = 1.0 GHz

dB

17.5

f = 2.0 GHz

11.5

P1 dB

Power Output @ 1 dB Gain Compression

f = 2.0 GHz

dBm

18.5

VCE = 8 V, IC = 25 mA

G1 dB

1 dB Compressed Gain; VCE = 8 V, IC = 25 mA

f = 2.0 GHz

dB

14.0

NFO

Optimum Noise Figure: VCE = 8 V, IC = 10 mA

f = 1.0 GHz

dB

1.4

1.8

f = 2.0 GHz

1.7

f = 4.0 GHz

3.0

GA

Gain @ NFO; VCE = 8 V, IC = 10 mA

f = 1.0 GHz

dB

17.5

18.5

f = 2.0 GHz

13.5

f = 4.0 GHz

9.5

fT

Gain Bandwidth Product: VCE = 8 V, IC = 25 mA

GHz

8.0

hFE

Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA

—

30

150

270

ICBO

Collector Cutoff Current; VCB = 8 V

µA

0.2

IEBO

Emitter Cutoff Current; VEB = 1 V

µA

1.0

CCB

Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz

pF

0.25

Notes:

1. For this test, the emitter is grounded.

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