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ES1D Datasheet(PDF) 2 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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ES1D Datasheet(HTML) 2 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
2 / 4 page SANGDEST MICROELECTRONICS Technical Data Green Products Data Sheet N0159, Rev. D • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http:// www.smc-diodes.com • E-Mail Address - sales@ sangdest.com.cn • ES1A-ES1M 1.0A SURFACE MOUNT SUPER FAST RECTIFIER Ordering Information: Device Package Shipping ES1(A-M) SMA (Pb-Free) 5000pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified Single Phase half wave 60Hz, resistive or inductive load. For capacitive load current derate by 20%. Note: 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC 2. Measured with IF=0.5A, IR=1.0A, Irr=0.25A, 3. Mounted on P.C. Board with 8.0mm 2 lead area Characteristic Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1J ES1K ES1M Units Peak Repetitive Reverse Voltage VRRM 50 100 150 200 300 400 600 800 1000 RMS Reverse Voltage VR(RMS) 34 70 105 140 210 280 420 560 700 V Average Rectified Output Current @TL =120°C Io 1.0 V Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A Forward voltage @IF =1.0A VF 0.95 1.3 1.7 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IR 10 350 µA Typical junction capacitance (Note 1) CJ 45.0 pF Reverse Recovery Time (Note 2) Trr 35 ns Electro-Static Discharge ESD 2000 V Typical thermal resistance (Note 3) RθJL 35 K/W Operating Junction and Storage Temperature Range TJ,TSTG -55 to +150 °C Case Style SMA |
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