7-91

Parameter

Min.

Max.

-0.2 V

8 V

-0.2 V

600 mW

RF Input Power

15 dBm

Junction Temperature

+150

°C

Storage Temperature

-55

°C

+125

°C

HPMX-5001 Guaranteed Electrical Specifications

results are based upon use of networks shown in test board schematic diagram (see Figure 28). Typical

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

dB

12

14

Transmitter Power Output

2:1 output VSWR

dBm

0

2

Device Supply Current

Transmit Mode

mA

64

80

Receive Mode

mA

43

54

Synth Mode

mA

15

19

Standby Mode (with DIVMC Set High)

µA1

50

0.7

1

Notes:

1. 50

Ω RF source, 100 MHz < I

matching network from 750

Ω to 50 Ω is used for this measurement. Insertion loss of the matching network is included in the net

conversion gain figure. See Figure 28.

2. Signal injected into P3 in Figure 28 is -12.5 dBm.

3. DIV output AC coupled into a 2 k

Ω || 10 pF load. See test board schematic diagram, Figure 28.

θ

Notes:

1. Operation of this device in excess of

any of these parameters may cause

permanent damage.

3. Derate at 10 mW/

°C for T

4. Except CMOS logic inputs – see

Summary Characterization Information

table.