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HPMX-5001-TY1 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard) |
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HPMX-5001-TY1 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard) |
2 / 15 page 7-91 HPMX-5001 Absolute Maximum Ratings[1] Parameter Min. Max. VCC Supply Voltage -0.2 V 8 V Voltage at Any Pin[4] -0.2 V VCC + 0.2 V Power Dissipation[2,3] 600 mW RF Input Power 15 dBm Junction Temperature +150 °C Storage Temperature -55 °C +125 °C HPMX-5001 Guaranteed Electrical Specifications Unless otherwise noted, all parameters are guaranteed under the following conditions: VCC = 3.0 V. Test results are based upon use of networks shown in test board schematic diagram (see Figure 28). Typical values are for VCC = 3.0 V, TA = 25°C. Symbol Parameters and Test Conditions Units Min. Typ. Max. GC Receive Conversion Gain[1] dB 12 14 Pout Transmitter Power Output Input[2] 2:1 output VSWR dBm 0 2 ICC Device Supply Current Transmit Mode mA 64 80 Receive Mode mA 43 54 Synth Mode mA 15 19 Standby Mode (with DIVMC Set High) µA1 50 VDIV DIV Single-Ended Swing[3] VPP 0.7 1 Notes: 1. 50 Ω RF source, 100 MHz < I F < 300 MHz, 1.89 GHz RF. There is a 750 Ω resistor on chip between RXIF and RXIFB (pins 3 and 4). A matching network from 750 Ω to 50 Ω is used for this measurement. Insertion loss of the matching network is included in the net conversion gain figure. See Figure 28. 2. Signal injected into P3 in Figure 28 is -12.5 dBm. 3. DIV output AC coupled into a 2 k Ω || 10 pF load. See test board schematic diagram, Figure 28. Thermal Resistance[2]: θ jc = 100°C/W Notes: 1. Operation of this device in excess of any of these parameters may cause permanent damage. 2. TCASE = 25°C. 3. Derate at 10 mW/ °C for T CASE >90°C. 4. Except CMOS logic inputs – see Summary Characterization Information table. |
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