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2SB903_2014 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB903_2014 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 4 page  JMnic Product Specification 2 Silicon PNP Power Transistors 2SB903 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=-1mA ; IE=0 -60 V V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;RBE=∞ -30 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-5A, IB=-0.25A -0.5 V ICBO Collector cut-offcurrent VCB=-40V;IE=0 -0.1 mA IEBO Emitter cut-offcurrent VEB=-4V;IC=0 -0.1 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 70 280 hFE-2 DC current gain IC=-6A ; VCE=-2V 30 fT Transition frequency IC=-1A ; VCE=-5V 120 MHz Switching times ton Turn-on time 0.10 μs tstg Storage time 0.30 μs tf Fall time IC=-5A ;IB1=-IB2=-0.5A; VCC=-10V;RL=2Ω 0.03 μs hFE-1 classifications Q R S 70-140 100-200 140-280 |
Similar Part No. - 2SB903_2014 |
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