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2SB1017_2014 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB1017_2014 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SB1017 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 -1.7 V VBE Base-emitter on voltage IC=-3A ;VCE=-5V -1.0 -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -30 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 40 240 hFE-2 DC current gain IC=-3A ; VCE=-5V 15 fT Transition frequency IC=-0.5A; VCE=-5V 9 MHz COB Collector output capacitance IE=0, f=1MHz ; VCB=-10V 130 pF hFE-1 Classifications R O Y 40-80 70-140 120-240 |
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