6-97

INA-02184, -02186 Absolute Maximum Ratings

Parameter

Device Current

50 mA

400 mW

RF Input Power

+13dBm

Junction Temperature

+150

°C

Storage Temperature

–65 to 150

°C

θ

θ

Notes:

1. Permanent damage may occur if

any of these limits are exceeded.

3. Derate at 11.1 mW/

°C for T

144

°CforINA-02184.

4. Derate at 10 mW/

°C for T

for INA-02186.

f = 0.5 GHz

dB

29.0 31.0

29.0 31.0

Gain Flatness

f = 0.01 to 1.0 GHz

dB

± 2.0

± 2.0

GHz

0.8

0.8

ISO

f = 0.01 to 1.0 GHz

dB

39

39

Input VSWR (Max over Freq. Range)

f = 0.01 to 1.0 GHz

1.5

2.0

Output VSWR (Max over Freq. Range)

f = 0.01 to 1.0 GHz

1.7

1.7

NF

50

Ω Noise Figure

f = 0.5 GHz

dB

2.0

2.0

Output Power at 1 dB Gain Compression

f = 0.5 GHz

dBm

11

11

Third Order Intercept Point

f = 0.5 GHz

dBm

23

23

Group Delay

f = 0.5 GHz

psec

330

350

Device Voltage

V

4.0

5.5

7.0

4.0

5.5

7.0

dV/dT

Device Voltage Temperature Coefficient

mV/

°C

+10

+10

Notes:

1. The recommended operating current range for this device is 30 to 40 mA. Typical performance as a function of current

is on the following page.

Symbol Parameters and Test Conditions: I

VSWR

INA-02184, -02186 Part Number Ordering Information

Part Number

No. of Devices

Container

INA-02184-TR1

1000

7" Reel

INA-02184-BLK

100

Antistatic Bag

INA-02186-TR1

1000

7" Reel

INA-02186-BLK

100

Antistatic Bag

For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

INA-02184

INA-02186