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IXDN430 Datasheet(PDF) 3 Page - IXYS Corporation |
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IXDN430 Datasheet(HTML) 3 Page - IXYS Corporation |
3 / 12 page 3 IXDN430 / IXDI430 / IXDD430 / IXDS430 Unless otherwise noted, T A = 25 oC, 8.5V ≤ V CC ≤ 35V . All voltage measurements with respect to GND. IXDD430 configured as described in Test Conditions. Electrical Characteristics S y m b ol Pa r a m e te r Te s t C o n d itions M in Ty p M a x U n its V IH H igh in pu t v olta ge 0V ≤ V IN ≤ V CC, 8. 5 V ≤ V IN ≤ 18V 3.5 V V IL Low in p ut v oltag e 0V ≤ V IN ≤ V CC, 8. 5 V ≤ V IN ≤ 18V 0.8 V V IN In put volta ge r ange -5 V CC + 0.3 V IIN In put current 0V ≤ V IN ≤ V CC -1 0 1 0 µ A V OH H igh o utp ut v o lta g e V CC - 0 .02 5 V V OL Low outp u t v o ltage 0.0 2 5 V R OH O u tp ut res is tan c e @ O u tp ut h igh V CC = 18V 0.3 0.4 Ω R OL O u tp ut res is tan c e @ O u tp u t L o w V CC = 18V 0 .2 0 .3 Ω IPEAK P e ak output c urre nt V CC = 1 8 V 30 A IDC C o n tinu o us ou tp ut c u rre n t L im ited b y p a ck a ge p o w e r dis s ipa tio n 8 A V EN E n a b le vo ltag e ra ng e IX D D 430 O n ly - 0 .3 V cc + 0.3 V V EN H H igh E n In p u t V o ltag e IX D D 430 O n ly 2/3 V cc V V EN L Low E n In put V oltage IX D D 430 O nly 1/3 V c c V R EN E N Input R e s ista n ce IX D S 43 0 O n ly 4 00 K o h m V IN V IN V V o lta g e R a ng e IX D S 43 0 O n ly - 0 .3 V cc + 0.3 V V IN V H H igh IN V In p u t V o ltage IX D S 43 0 O n ly 2/3 V cc V V IN V L Low IN V Inpu t V o ltag e IX D S 43 0 O n ly 1/3 V c c V R IN V IN V In put R e s istance IX D S 43 0 O n ly 4 00 K o h m tR R is e tim e C L=5600pF V c c = 18V 1 8 2 0 ns tF F a ll tim e C L=5600pF V c c = 18V 1 6 1 8 ns tON D L Y O n-tim e p rop agatio n d e la y C L=5600pF V c c = 18V 4 1 4 5 ns tOFFD L Y O ff-tim e p rop agatio n d e la y C L=5600pF V c c = 18V 3 5 3 9 ns tEN O H E n a ble to output hig h de la y tim e IX D D 430 O n ly , V cc= 18 V 4 7 ns tDO LD D isable to output lo w de la y tim e IX D D 430 O n ly , V cc= 18 V 12 0 ns V CC P ow e r supp ly v o lta ge 8.5 1 8 3 5 V ICC P o w e r supp ly curre n t V IN = 3 .5V V IN = 0 V V IN = + V CC 1 0 3 10 10 mA µ A µ A U V L O IX D _ 4 3 0 M ; IX D S 4 3 0 : IX D _ 4 3 0 ; IX D S 4 3 0 : UVS E L = V CC (M O S F E T ) UVS E L = O P EN (IG B T ) 7.5 10 .5 8.5 11 .7 5 9.5 13 .0 V V Absolute Maximum Ratings (Note 1) Parameter Value Supply Voltage 40 V All Other Pins -0.3 V to VCC + 0.3 V Power Dissipation, TAMBIENT ≤25 oC TO220 (CI), TO263 (YI) 2W Derating Factors (to Ambient) TO220 (CI), TO263 (YI) 0.016W/oC Storage Temperature -65 oC to 150 oC Lead Temperature (10 sec) 300 oC Operating Ratings P a ra m e te r V alu e M a xim um Junc tion T em perature 150 o C O pera ting T em perature R ange -55 o C to 125 o C T herm al Im pedance T O 220 (C I), TO 263 (Y I) θ JC (J u n ctio n T o C a se) 0.95 o C/W θ JA (J u nc tion T o A m bien t) 62.5 o C/W T herm al Im pedance 28 pin S O IC w ith H eat S lug (S I) θ JC (J u n ctio n T o C a se) 3 o C/W Specifications Subject To Change Without Notice Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. |
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