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IXDN430 Datasheet(PDF) 3 Page - IXYS Corporation

Part # IXDN430
Description  30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXDN430 Datasheet(HTML) 3 Page - IXYS Corporation

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IXDN430 / IXDI430 / IXDD430 / IXDS430
Unless otherwise noted, T
A = 25
oC, 8.5V
≤ V
CC
35V .
All voltage measurements with respect to GND. IXDD430 configured as described in Test Conditions.
Electrical Characteristics
S y m b ol
Pa r a m e te r
Te s t C o n d itions
M in
Ty p
M a x
U n its
V IH
H igh in pu t v olta ge
0V
≤ V
IN ≤ V CC, 8. 5 V ≤ V IN ≤ 18V
3.5
V
V IL
Low in p ut v oltag e
0V
≤ V
IN ≤ V CC, 8. 5 V ≤ V IN ≤ 18V
0.8
V
V IN
In put volta ge r ange
-5
V CC + 0.3
V
IIN
In put current
0V
≤ V
IN ≤ V CC
-1 0
1 0
µ A
V OH
H igh o utp ut v o lta g e
V CC - 0 .02 5
V
V OL
Low outp u t v o ltage
0.0 2 5
V
R OH
O u tp ut res is tan c e
@ O u tp ut h igh
V CC = 18V
0.3
0.4
R OL
O u tp ut res is tan c e
@ O u tp u t L o w
V CC = 18V
0 .2
0 .3
IPEAK
P e ak output c urre nt
V CC = 1 8 V
30
A
IDC
C o n tinu o us ou tp ut
c u rre n t
L im ited b y p a ck a ge p o w e r
dis s ipa tio n
8
A
V EN
E n a b le vo ltag e ra ng e
IX D D 430 O n ly
- 0 .3
V cc + 0.3
V
V EN H
H igh E n In p u t V o ltag e
IX D D 430 O n ly
2/3 V cc
V
V EN L
Low E n In put V oltage
IX D D 430 O nly
1/3 V c c
V
R EN
E N Input R e s ista n ce
IX D S 43 0 O n ly
4 00
K o h m
V IN V
IN V V o lta g e R a ng e
IX D S 43 0 O n ly
- 0 .3
V cc + 0.3
V
V IN V H
H igh IN V In p u t V o ltage
IX D S 43 0 O n ly
2/3 V cc
V
V IN V L
Low IN V Inpu t V o ltag e
IX D S 43 0 O n ly
1/3 V c c
V
R IN V
IN V In put R e s istance
IX D S 43 0 O n ly
4 00
K o h m
tR
R is e tim e
C L=5600pF V c c = 18V
1 8
2 0
ns
tF
F a ll tim e
C L=5600pF V c c = 18V
1 6
1 8
ns
tON D L Y
O n-tim e p rop agatio n
d e la y
C L=5600pF V c c = 18V
4 1
4 5
ns
tOFFD L Y
O ff-tim e p rop agatio n
d e la y
C L=5600pF V c c = 18V
3 5
3 9
ns
tEN O H
E n a ble to output hig h
de la y tim e
IX D D 430 O n ly , V cc= 18 V
4 7
ns
tDO LD
D isable to output lo w
de la y tim e
IX D D 430 O n ly , V cc= 18 V
12 0
ns
V CC
P ow e r supp ly v o lta ge
8.5
1 8
3 5
V
ICC
P o w e r supp ly curre n t
V IN = 3 .5V
V IN = 0 V
V IN = + V CC
1
0
3
10
10
mA
µ A
µ A
U V L O
IX D _ 4 3 0 M ; IX D S 4 3 0 :
IX D _ 4 3 0 ;
IX D S 4 3 0 :
UVS E L = V CC (M O S F E T )
UVS E L = O P EN (IG B T )
7.5
10 .5
8.5
11 .7 5
9.5
13 .0
V
V
Absolute Maximum Ratings (Note 1)
Parameter
Value
Supply Voltage
40 V
All Other Pins
-0.3 V to VCC + 0.3 V
Power Dissipation, TAMBIENT ≤25 oC
TO220 (CI), TO263 (YI)
2W
Derating Factors (to Ambient)
TO220 (CI), TO263 (YI)
0.016W/oC
Storage Temperature
-65 oC to 150 oC
Lead Temperature (10 sec)
300 oC
Operating Ratings
P a ra m e te r
V alu e
M a xim um Junc tion T em perature
150 o C
O pera ting T em perature R ange
-55 o C to 125 o C
T herm al Im pedance T O 220 (C I), TO 263 (Y I)
θ
JC (J u n ctio n T o C a se)
0.95 o C/W
θ
JA (J u nc tion T o A m bien t)
62.5 o C/W
T herm al Im pedance 28 pin S O IC w ith H eat S lug (S I)
θ
JC (J u n ctio n T o C a se)
3 o C/W
Specifications Subject To Change Without Notice
Note 1: Operating the device beyond parameters with listed “absolute maximum ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.


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