6-263

MSA-0186 Absolute Maximum Ratings

Parameter

Device Current

40 mA

200 mW

RF Input Power

+13dBm

Junction Temperature

150

°C

Storage Temperature

–65 to 150

°C

θ

f = 0.1 GHz

dB

18.5

f = 0.5 GHz

15.5

17.5

Gain Flatness

f = 0.1 to 0.6 GHz

dB

± 0.7

3 dB Bandwidth

GHz

0.9

Input VSWR

f = 0.1 to 3.0 GHz

1.3:1

Output VSWR

f = 0.1 to 3.0 GHz

1.2:1

NF

50

Ω Noise Figure

f = 0.5 GHz

dB

5.5

Output Power at 1 dB Gain Compression

f = 0.5 GHz

dBm

1.5

Third Order Intercept Point

f = 0.5 GHz

dBm

14.0

Group Delay

f = 0.5 GHz

psec

200

Device Voltage

V

4.0

5.0

6.0

dV/dT

Device Voltage Temperature Coefficient

mV/

°C

–9.0

Note:

1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current

is on the following page.

Symbol

Parameters and Test Conditions: I

Units

Min.

Typ.

Max.

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

3. Derate at 8.7 mW/

°C for T

4. See MEASUREMENTS section “Thermal Resistance” for more information.

VSWR

Part Number Ordering Information

Part Number

No. of Devices

Container

MSA-0186-BLK

100

Antistatic Bag

MSA-0186-TR1

1000

7" Reel

For more information refer to PACKAGING section, “Tape and Reel

Packaging for Semiconductor Devices.”