IXTI10N60P datasheet(1/4 Pages) IXYS

Part #	IXTI10N60P

Description	PolarHV Power MOSFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

° C to 175° C

600

V

DGR

T

J

= 25

° C to 175° C; R

GS = 1 MΩ

600

V

GS

Continuous Transient

±30

V

I

D25

T

C = 25° C10

A

I

DM

T

C = 25° C, pulse width limited by TJM

30

A

I

AR

T

C = 25° C10

A

E

AR

T

C = 25° C20

mJ

E

AS

T

C = 25° C

500

mJ

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

10

V/ns

T

J

≤150° C, R

G = 10 Ω

P

D

T

C = 25° C

200

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

260

°C

M

d

Mounting torque

(TO-220)

1.13/10 Nm/lb.in.

F

C

Mounting force

(Leaded TO-263)

10..65 / 2.5..15

N/lb.

Weight

TO-220

4

g

TO-263 types

3

g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99330E(03/06)

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA

600

V

GS(th)

V

DS = VGS, ID = 100µA

3.0

5.0

V

I

GSS

V

GS = ±30 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

5

µA

V

GS = 0 V

T

J = 125° C50

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

740 m

Ω

Pulse test, t

≤300 µs, duty cycle d ≤ 2 %

PolarHVTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

l International standard packages

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

IXTA 10N60P

IXTI 10N60P

IXTP 10N60P

V

DSS

= 600

V

I

D25

=

10

A

R

DS(on) ≤

≤≤≤≤ 740 mΩ

Ω

TO-220 (IXTP)

D

(TAB)

G

S

TO-263 (IXTA)

G

S

G

D

S

(TAB)

Leaded TO-263 (IXTI)

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