IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 24P20

Fig. 9. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

0

20

40

60

80

100

120

140

160

Q

V

I

I

Fig. 7. Transconductance

0

3

6

9

12

15

18

21

24

-30

-27

-24

-21

-18

-15

-12

-9

-6

-3

0

I

T

25ºC

125ºC

Fig. 8. Source Current vs.

Source-To-Drain Voltage

-80

-70

-60

-50

-40

-30

-20

-10

0

-4

-3.5

-3

-2.5

-2

-1.5

-1

-0.5

V

T

T

Fig. 12. Forw ard-Bias Safe

Operating Area

1

10

100

1000

10

100

1000

V

100µs

1ms

DC

T

T

10ms

Fig. 11. Capacitance

100

1000

10000

-40

-35

-30

-25

-20

-15

-10

-5

0

V

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Tem perature dependence of

Breakdow n and Threshole Voltage

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

-50

-25

0

25

50

75

100

125

150

T